En

Failure Analysis
Failure Analysis

Items

Standard

Application

Optical Microscope

 

To inspect sample appearance, die surface, crack, contamination, scratch and oxide layer defects, etc.

X-RAY

 

To inspect bonding wires, attached die and lead frame and void, etc.

*SAT

JEDEC J-STD-035-1999

To inspect delamination, package crack, die crack, void in resin and bonding layer between die and pad, etc.

Juno Test

 

To test parameter of semiconductors, including diode, transistor, MOS and three-terminal regulator.

*Iv Curve Tracer

GB/T 13973-2012

To test parameter of semiconductors and ICs, including MOS and BJT, compared with good unit to find differences.

TDR

 

To measure reflections and time delays of pulses injected into a transmission line. Failure location, impedance measurement and open/short test.

De-Cap

 

To remove the compound to expose the die and observe defects of die and bonding wire.  

Probe Test

 

To measure electrical parameter or characteristic curve of the die

Crater Test

 

To remove the top metal layer on pad and to observe the underlay damage

Ion Milling System

 

To do ion milling polishing to inspect tiny cracks, void and multilayer structure interface.

SEM

 

To observe the surface and cross section of sample’s microstructure and measure the dimension of critical layer with high meg microscope.

EDX

 

To conduct qualitative and semi-quantitative element analysis for specified microstructure on the sample surface.

RIE

 

To inspect defects layer by layer, including etching residue, metal crack, metal damage, oxide defect and poor via connection.


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版權所有@江蘇長電科技股份有限公司
保留一切權利
蘇ICP備05082751號 32028102000607
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